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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface.

Anna Dmitriyeva1, Vitalii Mikheev1, Sergei Zarubin1

  • 1Moscow Institute of Physics and Technology, 9, Institutskiy lane, Dolgoprudny, Moscow Region, 141700, Russia.

ACS Nano
|September 1, 2021
PubMed
Summary
This summary is machine-generated.

Researchers experimentally confirmed magnetoelectric coupling at the nickel/hafnium zirconium oxide interface. This ferroelectric effect on magnetic properties in composite multiferroics shows promise for advanced semiconductor devices.

Keywords:
Hf0.5Zr0.5O2MCDADXMCDcomposite multiferroicsferroelectric HfO2magnetoelectric couplingoperando spectroscopy

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Composite multiferroics offer enhanced magnetoelectric coupling.
  • Hafnium oxide-based ferroelectrics are promising for multiferroic applications.
  • Previous theory predicted charge-mediated magnetoelectric coupling at Ni/HfO2 interfaces.

Purpose of the Study:

  • To experimentally verify magnetoelectric coupling at the Ni/Hf0.5Zr0.5O2 interface.
  • To investigate the influence of ferroelectric polarization on magnetic properties.
  • To understand the role of interface structure and electronic properties.

Main Methods:

  • Utilized operando X-ray Absorption Spectroscopy/X-ray Magnetic Circular Dichroism (XAS/XMCD).
  • Employed High-energy X-ray Photoelectron Spectroscopy/Magnetic Circular Dichroism AND (HAXPES/MCDAD).
  • Conducted theoretical modeling and density functional theory calculations.

Main Results:

  • Demonstrated ferroelectric polarization's effect on the magnetic response of a Ni layer.
  • Identified an ultrathin NiO interlayer crucial for controlling the magnetoelectric effect.
  • Achieved agreement between experimental findings and theoretical modeling of the Ni/HZO interface.

Conclusions:

  • Experimental evidence confirms magnetoelectric coupling at the Ni/HZO interface.
  • The NiO interlayer plays a critical role in the observed magnetoelectric effect.
  • Hafnium oxide-based composite multiferroics are suitable for multifunctional semiconductor devices.