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Centimeter-Scale Few-Layer PdS2: Fabrication and Physical Properties.

Xudong Zhang1, Guowen Su1, Jiangwei Lu1

  • 1National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.

ACS Applied Materials & Interfaces
|September 2, 2021
PubMed
Summary

We synthesized centimeter-scale few-layer palladium disulfide (PdS2) using PVD and CVD methods. This novel semiconductor shows excellent electronic properties for next-generation opto-electronic devices.

Keywords:
KPFMRaman spectroscopyfield-effect transistorsnTMDspolarized Raman scattering

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Novel semiconductive materials are crucial for advancing electronic devices.
  • Transition metal dichalcogenides (TMDs) are promising candidates for next-generation electronics.
  • Palladium disulfide (PdS2), a group-10 TMD, exhibits unique layer-dependent electronic properties and high carrier mobility.

Purpose of the Study:

  • To achieve large-scale synthesis of few-layer PdS2.
  • To investigate the optical and electronic properties of few-layer PdS2.
  • To explore the potential of PdS2 for high-performance opto-electronic applications.

Main Methods:

  • Centimeter-scale synthesis of few-layer PdS2 using combined physical vapor deposition (PVD) and chemical vapor deposition (CVD).
  • Angle-resolved polarized Raman spectroscopy to study optical anisotropic properties.
  • Fabrication and characterization of field-effect transistor (FET) devices to evaluate electronic properties.
  • Density functional theory (DFT) calculations to understand electronic structure.

Main Results:

  • Successful centimeter-scale synthesis of few-layer PdS2.
  • First-time investigation of optical anisotropic properties and temperature-dependent Raman spectra (12-300 K).
  • PdS2 FETs demonstrated tunable ambipolar transport with high field-effect mobility (∼388 cm2 V−1 s−1) and on/off ratio (∼800).

Conclusions:

  • Few-layer PdS2 possesses excellent electronic and optical properties.
  • The demonstrated synthesis and characterization pave the way for PdS2 in advanced electronic applications.
  • PdS2 is a promising material for developing high-performance opto-electronic devices.