Design of reflective phase retarders in the extreme ultraviolet based on chirped Mo/Si multilayer mirrors

The extreme ultraviolet (EUV) phase retarder is an important optical element for polarization analysis and conversion of EUV synchrotron radiation. In this paper, a linearly chirped Mo/Si multilayer mirror is used to design an EUV phase retarder. With increasing thickness variation of the chirped multilayer, the reflective phase retardation between s- and p-polarized light increases at first and then reaches its maximum value. When the bilayer number increases from 2 to 20, the maximum phase retardation for an EUV source with a photon energy of 90 eV increases from 5.97° to 245.10° for a linearly chirped Mo/Si multilayer with 14.7 nm central thickness. In addition, the phase retardations of chirped mirrors at different photon energies (80 eV, 85 eV and 90 eV) are also investigated and compared. Furthermore, the physical mechanism of reflective phase retardation improvement is also studied by investigating the field intensity distributions inside chirped mirrors.