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Updated: Oct 21, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures
Yanqiu Sun1, Yuan Liu1, Siyuan Hong1
1Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China.
Abstract:
Recently, two-dimensional superconductivity was discovered at the oxide interface between KTaO_{3} and LaAlO_{3} (or EuO), whose superconducting transition temperature T_{c} is up to 2.2 K and exhibits strong crystalline-orientation dependence. However, the origin of the interfacial electron gas, which becomes superconducting at low temperatures, remains elusive. Taking the LaAlO_{3}/KTaO_{3}(111) interface as an example, we have demonstrated that there exists a critical LaAlO_{3} thickness of ∼3 nm. Namely, a thinner LaAlO_{3} film will give rise to an insulating but not conducting (or superconducting) interface. By in situ transport measurements during growth, we have also revealed that the critical thickness can be suppressed if exposure to oxygen is avoided. These observations, together with other control experiments, suggest strongly that the origination of the electron gas is dominated by the electron transfer that is from oxygen vacancies in the LaAlO_{3} film to the KTaO_{3} substrate.
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