Related Experiment Video

Updated: Oct 21, 2025

Magnetic Tweezers for the Measurement of Twist and Torque
11:41

Magnetic Tweezers for the Measurement of Twist and Torque

Published on: May 19, 2014

23.5K

Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory

Daniel Sanchez Hazen1, Stéphane Auffret, Isabelle Joumard

  • 1SPINTEC, Univ. Grenoble Alpes/CEA/CNRS, 38000-Grenoble, France. bernard.dieny@cea.fr.

Nanoscale
|September 3, 2021
PubMed
Summary

Researchers demonstrated a new double magnetic tunnel junction with an assistance layer for spin transfer torque magnetic random-access memory (STT-MRAM). This innovation improves STT-MRAM cell performance by a factor of four, enhancing data storage efficiency.

More Related Videos

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains07:42

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Published on: July 20, 2022

2.9K
Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques06:27

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Published on: July 2, 2018

8.3K

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
531
Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Torque On A Current Loop In A Magnetic Field01:13

Torque On A Current Loop In A Magnetic Field

The most common application of magnetic force on current-carrying wires is in electric motors. These consist of loops of wire, which are placed between the magnets with a magnetic field. When current flows through the loops, the magnetic field applies torque, which causes the shaft to rotate, thus converting electrical energy to mechanical energy.
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
4.9K
Diamagnetism01:26

Diamagnetism

Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....
2.5K
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
374