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Updated: Oct 21, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Nonvolatile magnetoelectric coupling in two-dimensional ferromagnetic-bilayer/ferroelectric van der Waals
Wenxuan Wang1, Wei Sun, Hang Li
1International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, PR China. hang.li@vip.henu.edu.cn.
Abstract:
One of the promising research topics on two-dimensional (2D) van der Waals (vdW) material based devices is the nonvolatile electrical control of magnetism. Usually, it is very hard to tune ferromagnetic or antiferromagnetic ordering by ferroelectric polarization due to strong exchange coupling. The existence of vdW layer spacing, however, which is ubiquitous in 2D materials, makes interlayer magnetic exchange coupling much weaker than interlayer coupling. In this work, we design a multiferroic heterostructure composed of a CrOBr ferromagnetic bilayer and an In2Se3 ferroelectric monolayer. The weaker interlayer exchange coupling of the CrOBr bilayer makes it easier to be regulated by ferroelectric polarization, enabling reversible nonvolatile electric control of shifts between ferromagnetic and antiferromagnetic ordering. The unique electrically controlled interlayer magnetic coupling for tuning the overall magnetism may be available for the practical application of 2D vdW bilayer magnets in high-sensitivity sensors and high-density data storage.
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