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Updated: Oct 21, 2025
08:43
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
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Suppressing Interface Strain for Eliminating Double-Slope Behaviors: Towards Ideal Conformable Polymer Field-Effect
Shuya Wang1, Xiaoli Zhao1, Cong Zhang1
1Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China.
Advanced Materials (Deerfield Beach, Fla.)
|September 4, 2021
Summary
Interface strain in polymer field-effect transistors (PFETs) hinders ideal performance. Releasing this strain via a simple peeling strategy leads to highly conformable and ideal PFETs for flexible electronics.
Area of Science:
- Materials Science
- Organic Electronics
- Device Physics
Background:
- High-mobility polymer field-effect transistors (PFETs) are crucial for soft electronics and flexible displays due to their processability and flexibility.
- However, deviations from ideal behavior (variable mobility, high threshold voltage, off-state current) limit their practical use.
- Interface strain between polymer films and substrates is identified as a key factor affecting PFET ideality.
Purpose of the Study:
- To investigate the role of interface strain in PFET performance.
- To demonstrate a method for fabricating ideal and conformable PFETs by releasing strain.
- To provide guidance for constructing high-performance conformable PFETs.
Main Methods:
- Fabrication of PFETs on rigid substrates.
- Analysis of interface strain effects on device characteristics.
- Development and application of a one-step peeling strategy to release strain.
- Characterization of strain-released PFETs and their conformability.
Main Results:
- Interface strain significantly impacts PFET ideality, leading to non-ideal electrical characteristics.
- A facile one-step peeling strategy effectively releases interface strain.
- Strain release reduces π-π stacking distance and suppresses oxygen-doped carriers.
- Ideal PFETs with linear charge injection and reduced carrier concentration were achieved.
- Fabricated ideal conformable PFET arrays showed excellent performance on curved surfaces and in driving OLEDs.
Conclusions:
- Interface strain is a critical factor limiting the performance of high-mobility PFETs.
- A simple peeling strategy effectively releases strain, enabling the fabrication of ideal and conformable PFETs.
- This approach offers a viable pathway for developing advanced flexible electronic devices.
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