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Adjustable magnetoresistance in semiconducting carbonized phthalonitrile resin
Chong Gao1, Ming Yang2, Wenhao Xie1,3
1Shanghai Key Lab of Chemical Assessment and Sustainability, School of Chemical Science and Engineering, Tongji University, Shanghai 200092, China. hongbogu2014@tongji.edu.cn.
Abstract:
Herein, we report the first example of controllable magnetoresistance in a semiconducting carbonized phthalonitrile resin. This special phenomenon is explained using the different ratios of graphite-like (sp2) and diamond-like (sp3) bonds and localization length (a0) as well as the density of states at the Fermi-level (N(EF)).
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