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Chip-Scale Droop-Free Fin Light-Emitting Diodes Using Facet-Selective Contacts.

Robin P Hansen¹, Yuqin Zong¹, Amit Agrawal^1,2

¹National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.

ACS Applied Materials & Interfaces

|September 8, 2021

Summary

This summary is machine-generated.

Researchers developed droop-free fin light-emitting diodes (LEDs) that achieve microwatt output powers. This scalable method enables high-brightness ultraviolet light sources for demanding applications.

Keywords:

droop-free fin heterojunction light-emitting diode metallization nanolaser quantum efficiency

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Area of Science:

Optoelectronics
Semiconductor devices
Nanotechnology

Background:

Sub-micron light sources suffer from low power (nanowatts) due to current density and temperature droop.
Previous work introduced droop-free fin LED pixels achieving microwatt output powers at high current densities.

Purpose of the Study:

To demonstrate a scalable method for electrical injection into sub-200 nm wide n-ZnO fins on p-GaN.
To fabricate and characterize electrically addressable fin LEDs for high-brightness applications.

Main Methods:

Selective metallization of fin nonpolar side facets.
Fabrication of linear arrays of fin LEDs using 2 μm photolithography.
Electroluminescence analysis at high current densities (100-2000 kA/cm²) and temperatures (200-340 °C).

Main Results:

Achieved electrical injection into sub-200 nm ZnO fins with 0.8 μm² active area.
Fin LEDs emit narrow-band UV light (≈368-390 nm).
Emission intensity increased with current density without droop, even at high temperatures.

Conclusions:

The fin geometry effectively suppresses nonradiative recombination pathways like Auger recombination.
This approach enables high-brightness, sub-micron light sources operable at high temperatures and current densities.
The technology is suitable for advanced optoelectronic applications requiring compact, powerful light emitters.