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Updated: Oct 20, 2025

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon
Kęstutis Ikamas1,2, Dmytro B But3,4, Albert Cesiul1
1Institute of Applied Electrodynamics and Telecommunications, Vilnius University, LT-10257 Vilnius, Lithuania.
Abstract:
The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO). Three generations of the oscillator circuit are presented, and the performance characterization techniques and their improvement are explained in detail. The manuscript presents different emitter-detector pair operation modalities, including spectroscopy and imaging.
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