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Planar and Three-Dimensional Printing of Conductive Inks

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Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.

Wanqing Meng¹, Feifan Xu^1,2, Zhihao Yu^1,3

¹National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.

Nature Nanotechnology

|September 10, 2021

Summary

This summary is machine-generated.

Large-area molybdenum disulfide (MoS2) thin-film transistors were integrated with micro light-emitting diodes (LEDs) for high-resolution displays. This back-end-of-line process enables advanced electronic applications using 2D materials.

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Area of Science:

Materials Science
Electronics Engineering
Nanotechnology

Background:

Two-dimensional (2D) materials offer superior electronic properties at the atomic scale.
Integrating 2D materials into existing semiconductor fabrication (back-end-of-line, BEOL) is crucial for advanced computing and optoelectronics.
Low-temperature heterogeneous integration is key for adopting novel materials in mainstream technologies.

Purpose of the Study:

To demonstrate the integration of large-area molybdenum disulfide (MoS2) thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) using a BEOL process.
To evaluate the performance of MoS2 TFTs in driving micro-LEDs for high-resolution display applications.
To confirm the suitability of MoS2 TFTs for scalable, monolithic, low-temperature display manufacturing.

Main Methods:

Fabrication of large-area MoS2 thin-film transistors (TFTs).
Integration of MoS2 TFTs with nitride micro light-emitting diodes (LEDs) via a back-end-of-line (BEOL) process.
Performance characterization including mobility, drive current, luminance, response time, and power consumption.
Demonstration of a 32x32 active-matrix display prototype at 1,270 pixels-per-inch (PPI).

Main Results:

MoS2 TFTs achieved a median mobility of 54 cm^2 V^-1 s^-1 and a drive current of 210 μA/μm.
The TFTs successfully drove micro-LEDs to a luminance of 7.1 × 10^7 cd/m^2 at low voltage.
Demonstrated suitability for high-resolution (1,270 PPI) and high-brightness display applications.
Prototypical 32x32 active-matrix displays were successfully fabricated.

Conclusions:

The developed BEOL integration process is monolithic, low-temperature, scalable, and compatible with microelectronic fabrication.
MoS2 TFTs are a viable technology for next-generation high-performance displays.
This work paves the way for the widespread adoption of 2D materials in advanced electronic systems.