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Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention
Yuting Zhang1,2, Swapnadeep Poddar1,2, He Huang3
1Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
Science Advances
|September 13, 2021
Summary
This study explores halide perovskite nanowire (NW) arrays for electrochemical metallization resistive random access memory (Re-RAM). Researchers found a speed-retention trade-off, achieving ultrafast switching with MAPbI₃ and long retention with MAPbCl₃ NWs.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Resistive random access memories (Re-RAMs) are emerging nonvolatile memory technologies.
- Re-RAMs aim to bridge the performance gap between volatile DRAM and nonvolatile FLASH memory.
- Halide perovskites offer potential as switching layers in Re-RAM devices.
Purpose of the Study:
- To investigate electrochemical metallization (ECM) Re-RAMs utilizing high-density, three-dimensional halide perovskite nanowire (NW) arrays.
- To explore the performance characteristics of NW Re-RAMs based on methyl ammonium lead halide perovskites (MAPbX₃; X = Cl, Br, I).
- To understand the relationship between device switching speed and data retention time.
Main Methods:
- Fabrication of ECM Re-RAM devices with silver and aluminum contacts, using perovskite NWs as the switching layer.
- Characterization of Re-RAM devices based on three types of methyl ammonium lead halide perovskites: MAPbCl₃, MAPbBr₃, and MAPbI₃.
- Utilizing first-principles calculations to investigate the underlying mechanisms of device operation.
Main Results:
- A trade-off between switching speed and retention time was observed across different perovskite compositions.
- Ultrafast switching speeds of 200 ps were achieved with monocrystalline MAPbI₃ NW devices.
- ~7 × 10⁹ s extrapolated retention times were obtained for polycrystalline MAPbCl₃ NW devices.
- First-principles calculations revealed that decreasing lattice size (from MAPbI₃ to MAPbCl₃) increases the Ag diffusion energy barrier.
Conclusions:
- The study demonstrates the potential of halide perovskite NWs for high-performance Re-RAM applications.
- The observed speed-retention trade-off is attributed to the variation in silver diffusion energy barriers influenced by the perovskite lattice size.
- These findings provide insights into designing next-generation nonvolatile memory devices with tailored characteristics.
