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High performance and low power consumption resistive random access memory with Ag/Fe2O3/Pt structure.
Yiru Niu1,2, Kang'an Jiang1,2, Xinyuan Dong1,2
1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China.
Nanotechnology
|September 15, 2021
Summary
Iron oxide-based resistive random access memory (RRAM) shows improved performance with ultralow voltages and high endurance. This breakthrough offers potential for high-performance, low-power memory applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Iron oxide (Fe2O3) is a promising material for low-cost resistive random access memory (RRAM) due to its abundance and magnetic properties.
- Existing Fe2O3 RRAM devices suffer from high operation voltages and limited storage windows, hindering practical applications.
Purpose of the Study:
- To develop Fe2O3-based RRAM with significantly improved performance metrics, including lower operating voltage and enhanced storage characteristics.
- To investigate the underlying mechanism responsible for the improved device performance.
Main Methods:
- Fabrication of simple Ag/Fe2O3/Pt devices.
- Characterization of bipolar resistive switching behavior, including set/reset voltages, resistance ratio, endurance, and retention.
- Analysis of experimental results to establish a percolation model for silver ion migration.
Main Results:
- Achieved ultralow set voltage (0.16 V) and reset voltage (-0.04 V).
- Demonstrated a high OFF/ON resistance ratio (10^3) and excellent cycling endurance (>10^4 cycles).
- Established a percolation model attributing low operation voltage to an amorphous, porous oxide layer.
Conclusions:
- The developed Fe2O3 RRAM exhibits significant improvements in key parameters, offering an order of magnitude enhancement over previous studies.
- The devices show stable, low-power consumption, indicating strong potential for practical RRAM applications.
- The findings provide a new pathway for realizing high-performance, low-power Fe2O3-based memristors.
