Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

760
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
760
Types of Semiconductors01:20

Types of Semiconductors

1.0K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.0K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.1K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

370
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
370
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

578
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
578
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

884
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
884

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Scalable Graphene/Sn-WSe<sub>2</sub>/Si Photodetector Array With Broadband Response and Starlight Sensitivity for All-Light Vision.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Existential distress and social alienation in adolescents with allergic rhinitis: the serial mediating roles of psychological inflexibility and experiential avoidance.

Frontiers in public health·2026
Same author

Fe(NO<sub>3</sub>)<sub>3</sub>·9H<sub>2</sub>O-Promoted Direct Deaminative Thiocyanation of Primary Amine.

Organic letters·2026
Same author

Dietary fatty acids activate FATP4 and lipid transport via HIF1α and KDM4B in the small intestinal enterocytes.

Biochemical and biophysical research communications·2026
Same author

Treg cells protect astrocytes from ferroptosis after subarachnoid hemorrhage by activating the HIF-1α/Hmox1 pathway.

Frontiers in immunology·2026
Same author

Microglia Attenuate Neuroinflammation After Subarachnoid Hemorrhage by Modulating Astrocyte Phenotypic Transformation via the RARα/Mafb/Msr1 Pathway.

Molecular neurobiology·2026

Related Experiment Video

Updated: Oct 20, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.0K

A first principles study of p-type doping in two dimensional GaN.

Hongfu Huang1, Junhao Peng1, Huafeng Dong1,2

  • 1School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.

Physical Chemistry Chemical Physics : PCCP
|September 16, 2021
PubMed
Summary

Achieving p-type conductivity in low-dimensional gallium nitride (GaN) is challenging. Doping gallium nitride (GaN) with magnesium (Mg) offers a promising route for p-type semiconductor fabrication, crucial for advanced optoelectronic devices.

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.9K
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.7K

Related Experiment Videos

Last Updated: Oct 20, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.0K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.9K
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.7K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Physics

Background:

  • Low-dimensional gallium nitride (GaN) materials face challenges with asymmetric doping, particularly in achieving p-type conductivity.
  • Efficient p-type doping is crucial for developing advanced semiconductor devices.

Purpose of the Study:

  • To investigate the geometry, structure, and electronic defect properties of a two-dimensional graphene-like gallium nitride (g-GaN) monolayer.
  • To explore the effects of doping with Indium (In), Magnesium (Mg), and Zinc (Zn) at the Gallium (Ga) site on g-GaN.
  • To identify optimal doping strategies for achieving p-type conductivity in g-GaN.

Main Methods:

  • First-principles calculations were employed to study the electronic and structural properties of doped g-GaN.
  • The study analyzed impurity and intrinsic defect properties using a 'transfer to real state' model.
  • The dynamic stability of the g-GaN monolayer was assessed, including its stability at high temperatures.

Main Results:

  • Substituting Gallium (Ga) with Magnesium (Mg) at low concentrations is identified as a favorable method for p-type doping under Nitrogen-rich conditions.
  • The graphene-like gallium nitride (g-GaN) monolayer demonstrates dynamic stability, maintaining its integrity even at elevated temperatures.
  • The findings provide insights into defect properties and strategies for enhancing hole concentration.

Conclusions:

  • Magnesium (Mg) doping presents a viable strategy for fabricating p-type gallium nitride (GaN) semiconductors.
  • The stable nature of the g-GaN monolayer, even at high temperatures, makes it a promising candidate for optoelectronic applications.
  • This research paves the way for developing high-performance optoelectronic devices based on low-dimensional GaN materials.