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Updated: Oct 19, 2025

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Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography.

Paul Dumas1,2, Sebastien Duguay2, Julien Borrel1

  • 1STMicroelectronics Crolles, Crolles, France.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|September 21, 2021
PubMed
Summary

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Atom probe tomography revealed carbon clusters in implanted silicon do not exceed 2 at%. However, a refined method indicated these clusters approach 50 at% carbon, suggesting SiC phase nucleation.

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Ion implantation is crucial for semiconductor manufacturing.
  • Understanding defects like carbon clusters in silicon is vital for microelectronics.
  • Accurate quantification of impurities is essential for device performance.

Purpose of the Study:

  • To determine the composition of carbon clusters in implanted silicon using atom probe tomography.
  • To investigate the potential for silicon carbide (SiC) phase formation.
  • To improve carbon quantification methods in atom probe tomography.

Main Methods:

  • Atom probe tomography (APT) was utilized for high-resolution compositional analysis.
  • Analysis involved fitting nearest neighbor distances of carbon ions (C+, C2+).
Keywords:
atom probe tomographycarbonion implantationsilicon

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  • Detection of molecular ions under specific electric field conditions enhanced quantification.

    • Main Results:

    • Initial estimations suggested carbon clusters did not exceed 2 atomic percent (at%) in implanted silicon.
    • Employing improved quantification with molecular ions, carbon content in clusters was found to approach 50 at%.
    • The high carbon concentration strongly indicates the formation of silicon carbide (SiC) nuclei.

    Conclusions:

    • Atom probe tomography can accurately quantify carbon clusters in silicon.
    • The high carbon concentration in clusters points to the formation of SiC precipitates.
    • These findings have implications for defect engineering in silicon-based microelectronics.