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Updated: Oct 19, 2025
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Effect of the Hf content on the microstructure and ferroelectric properties of HfZr1-O2 thin films using an
Jingjing Wang1, Dayu Zhou1, Wei Dong1
1Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China. zhoudayu@dlut.edu.cn.
Abstract:
The synthesis of ferroelectric HfZr1-O2 (0 ≤ x ≤ 0.50) thin films by chemical solution deposition (CSD) on the surface of Si (100) substrates using all-inorganic salt precursors, is demonstrated in this study. The effects of the Hf content on the microstructure and ferroelectric properties of the films were investigated. The results showed that as the Hf component increased, the root mean square (RMS) roughness as well as the m-phase proportion gradually improved. Near the main diffraction peak of 30.7°, a phase transition from the orthorhombic to the cubic phase, and then to the tetragonal phase occurred. The best ferroelectric behaviour was obtained in the HfZr1-O2 film with a Hf content of 14% after 103 field cycling. The H0.14Z0.86O2 thin film exhibited the highest remanent polarization of 12.1 μC cm-2, accompanied by a relative permittivity of 31.8.
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