Related Experiment Video
Updated: Oct 19, 2025
05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
9.9K
Optically induced Kondo effect in semiconductor quantum wells
1Department of Physics and Engineering, ITMO University, Saint-Petersburg, 197101, Russia.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|September 21, 2021
Summary
Circularly polarized light can theoretically create localized electron states in 2D systems, leading to the Kondo effect through antiferromagnetic interactions with conduction electrons. Experimental conditions for this phenomenon in semiconductor quantum wells are explored.
Area of Science:
- Condensed Matter Physics
- Quantum Mechanics
- Materials Science
Background:
- Two-dimensional electron systems (2DES) exhibit unique quantum phenomena.
- The Kondo effect is a crucial many-body phenomenon in condensed matter physics.
- Controlling electron interactions in quantum systems is key for novel electronic devices.
Purpose of the Study:
- To theoretically investigate the induction of localized electron states via circularly polarized light in 2DES.
- To explore the antiferromagnetic interaction between these induced states and conduction electrons.
- To identify experimental conditions for observing the Kondo effect in semiconductor quantum wells.
Main Methods:
- Theoretical modeling of electron systems under irradiation.
- Quantum mechanical calculations of electron-electron interactions.
- Analysis of magnetic ordering and Kondo resonance conditions.
Main Results:
- Demonstration that circularly polarized irradiation can induce localized electron states.
- Confirmation of antiferromagnetic coupling between induced localized states and conduction electrons.
- Theoretical prediction of the resultant Kondo effect.
Conclusions:
- Circularly polarized light offers a novel pathway to engineer electron interactions in 2DES.
- The induced localized states can mediate the Kondo effect.
- Specific experimental parameters for semiconductor quantum wells are outlined for potential observation.
Related Concept Videos
01:27Biasing of Metal-Semiconductor Junctions
370
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
370
01:24Metal-Semiconductor Junctions
578
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
578
01:12Fermi Level Dynamics
401
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
401
01:16Biasing of P-N Junction
1.1K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.1K
01:22MOSFET: Enhancement Mode
530
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
530
01:20Types of Semiconductors
1.0K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.0K