Enhanced resistive switching performance in yttrium-doped CH₃NH₃PbI₃ perovskite devices

In this study, yttrium-doped CH₃NH₃PbI₃ (Y-MAPbI₃) and pure CH₃NH₃PbI₃ (MAPbI₃) perovskite films have been fabricated using a one-step solution spin coating method in a glove box. X-ray diffractometry and field-emission scanning electron microscopy were used to characterize the crystal structures and morphologies of perovskite films, respectively. It was found that the orientation of the crystal changed and the grains became more uniform in Y-MAPbI₃ film, compared with the pure MAPbI₃ perovskite film. The films were used to prepare the resistive switching memory devices with the device structure of Al/Y-MAPbI₃ (MAPbI₃)/ITO-glass. The memory performance of both devices was studied and showed a bipolar resistive switching behavior. The Al/MAPbI₃/ITO device had an endurance of about 328 cycles. In contrast, the Al/Y-MAPbI₃/ITO device exhibited an enhanced performance with a long endurance up to 3000 cycles. Moreover, the Al/Y-MAPbI₃/ITO device also showed a higher ON/OFF ratio of over 10³, long retention time (≥10⁴ s), lower operation voltage (±0.5 V) and outstanding reproducibility. Additionally, the conduction mechanism of the high resistance state transformed from space-charge limited current for a Y free device to the Schottky emission after Y doping. The present results indicate that the Al/Y-MAPbI₃/ITO device has a great potential to be used in high-performance memory devices.