Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Metallic Solids

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....

Gauss's Law: Planar Symmetry

Gauss's Law: Planar Symmetry

A planar symmetry of charge density is obtained when charges are uniformly spread over a large flat surface. In planar symmetry, all points in a plane parallel to the plane of charge are identical with respect to the charges. Suppose the plane of the charge distribution is the xy-plane, and the electric field at a space point P with coordinates (x, y, z) is to be determined. Since the charge density is the same at all (x, y) - coordinates in the z = 0 plane, by symmetry, the electric field at P...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Amphibian-inspired neuromorphic dynamic vision systems based on ferroelectric field-effect transistor.

Nature communications·2026

Same author

Optical metasurfaces for general vision processing on the edge.

Nature·2026

Same author

Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry.

Nature communications·2026

Same author

Bubble nucleation as a non-equilibrium phase transition in CO<sub>2</sub>/CH<sub>4</sub>hydrates.

Journal of physics. Condensed matter : an Institute of Physics journal·2026

Same author

High encoding-sensitivity vision sensor with complementary nonlinear neuromorphic computing.

Nature communications·2026

Same author

Chip-Scale Aligned Chiral Carbon Nanotubes Exhibiting Giant Second Harmonic Generation.

ACS nano·2026

Search research articles

Related Experiment Video

Updated: Oct 19, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Mechanical Anisotropy in Two-Dimensional Selenium Atomic Layers.

Jing-Kai Qin^1,2,3, Chao Sui^1,4, Zhao Qin⁵

¹Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China.

|September 22, 2021

Summary

This summary is machine-generated.

Two-dimensional trigonal selenium (t-Se) exhibits anisotropic mechanical properties. Its strength and modulus are higher along atomic chains than transverse directions due to bonding differences.

Keywords:

2D t-Se nanosheets DFT calculation MD simulation anisotropic mechanical properties in situ nanomechanical testing

More Related Videos

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Related Experiment Videos

Last Updated: Oct 19, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Two-dimensional (2D) trigonal selenium (t-Se) is a novel 2D semiconductor.
Its structure consists of aligned 1D Se atomic chains linked by van der Waals (vdW) interactions.
The mechanical properties of this anisotropic nanostructure remain unexplored.

Purpose of the Study:

To investigate the anisotropic mechanical properties of individual 2D t-Se nanosheets.
To understand the relationship between t-Se's unique nanostructure and its mechanical behavior.
To explore potential applications based on its mechanical characteristics.

Main Methods:

Combined experimental and theoretical analyses.
Mechanical testing of individual 2D t-Se nanosheets.
Analysis of fracture modes under orthogonal loading conditions.

Main Results:

Fracture strength and Young's modulus are significantly higher along the atomic chain direction compared to the transverse direction.
Anisotropy is attributed to strong covalent bonds within chains versus weak vdW interactions between chains.
Two distinct fracture modes were observed along orthogonal loading directions.

Conclusions:

2D t-Se demonstrates pronounced anisotropic mechanical behavior.
The findings provide crucial insights into the mechanical properties of 2D semiconducting materials.
This research opens avenues for novel applications of t-Se in nanotechnology.