Epitaxial BaSnO₃thin films with low dislocation density grown on lattice matched LaInO₃substrates

The use of LaInO₃with (110) surface orientation was investigated as a novel orthorhombic substrate for the epitaxial growth of semiconducting BaSnO₃thin films. On the basis of reflection high-energy electron diffraction, energy dispersive x-ray analysis and inductively coupled plasma-optical emission spectrometry measurements, we revealed that slight Ba doping of LaInO₃crystals is beneficial to stabilize the substrate surface, which facilitates the epitaxial growth of well-ordered BaSnO₃thin films by pulsed laser deposition. Fully strained BaSnO₃films without misfit dislocations found by means of transmission electron microscopy were achieved due to the negligible lattice mismatch between BaSnO₃film and Ba-doped LaInO₃substrate. Electric properties of La-doped BaSnO₃films exhibit a Hall-mobility of 69 cm²V^-1s^-1at room temperature and 99 cm²V^-1s^-1at 20 K at a constant charge carrier density of 3.8·10¹⁹cm^-3.