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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

1.0K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

367
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
367
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Fermi Level Dynamics01:12

Fermi Level Dynamics

395
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
395
P-N junction01:11

P-N junction

758
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Highlights in Semiconductor Device Development.

L Esaki1

  • 1IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.

Journal of Research of the National Bureau of Standards (1977)
|September 27, 2021
PubMed
Summary

This study reviews early semiconductor history, highlighting the transistor's invention and key developments. It emphasizes how semiconductor physics drove advancements in electronic device innovation.

Keywords:
III-V compoundsIMPATT diodeLASERLEDdiodefield-effect transitorintegrated circuitphotocellsolar cellsolid statetransitortunnel diode

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Electrical Engineering

Background:

  • The early history of semiconductors laid the groundwork for modern electronics.
  • Technological progress in semiconductor devices is intrinsically linked to fundamental physics principles.

Purpose of the Study:

  • To provide historical context for semiconductor device evolution.
  • To underscore the critical role of semiconductor physics in technological advancements.

Main Methods:

  • Historical review of semiconductor development.
  • Analysis of key inventions and their impact.
  • Emphasis on the theoretical underpinnings of device physics.

Main Results:

  • The invention of the transistor marked a pivotal moment in semiconductor history.
  • Subsequent innovations were significantly influenced by advancements in understanding semiconductor properties.
  • Semiconductor physics has been a primary driver for the progression of electronic devices.

Conclusions:

  • The historical trajectory of semiconductor technology is inseparable from the evolution of semiconductor physics.
  • Continued progress in electronic devices relies on a deep understanding and application of semiconductor physics principles.