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Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure.

Yi Lv1,2, Qian Wang1, Houpeng Chen1,2,3

  • 1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

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Summary
This summary is machine-generated.

This study introduces a novel 2T2R circuit for phase change memory (PCM) to boost storage density and combat resistance drift. The new design fundamentally enhances data reliability in multilevel storage systems.

Keywords:
2T2Rmultilevel storagephase change memoryresistance drift

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Engineering

Background:

  • Multilevel storage in phase change memory (PCM) enhances storage density but suffers from data reliability issues due to resistance drift.
  • Existing solutions focus on mitigating drift post-operation, rather than addressing the root cause.

Purpose of the Study:

  • To propose a novel 2T2R (2 Transistors, 2 Resistors) structure circuit for PCM.
  • To fundamentally reduce the influence of resistance drift and increase storage density.
  • To achieve 3-bit per cell storage.

Main Methods:

  • Designed a 2T2R structure circuit for PCM.
  • Utilized a wide range of resistance values to represent different states for 3-bit per cell storage.
  • Implemented a 4:3 compressing encoding scheme to convert output data into binary states.
  • Monitored conductance distribution over time (1 ms, 1 s, 6 h, 12 h) in 4000 devices.

Main Results:

  • The 2T2R structure demonstrated optimized storage density.
  • The proposed design significantly improved data reliability by mitigating resistance drift.
  • Simulation results confirmed the effectiveness of the 2T2R structure in enhancing multilevel storage performance.

Conclusions:

  • The novel 2T2R structure offers a fundamental solution to resistance drift in PCM.
  • This approach enhances both storage density and data reliability for multilevel storage applications.
  • The findings pave the way for more robust and higher-capacity phase change memory devices.