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Updated: Oct 18, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Yi Lv1,2, Qian Wang1, Houpeng Chen1,2,3
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
This study introduces a novel 2T2R circuit for phase change memory (PCM) to boost storage density and combat resistance drift. The new design fundamentally enhances data reliability in multilevel storage systems.
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