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Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum

Satoshi Iba¹, Ryogo Okamoto², Koki Obu²

¹Research Center for Emerging Computing Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan.

|September 28, 2021

Abstract:

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ_PL), and electron spin relaxation times (τ_s) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature T_g (430-600 °C) and a high V/III flux ratio using As₂. At 530 °C < T_g < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τ_PL~40 ns at RT, one order of magnitude longer than those reported so far. Long τ_s (~6 ns) is also observed at RT.

Keywords:

GaAs (110)molecular beam epitaxy photoluminescence spin relaxation

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Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

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