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HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition
Yuanyuan Cao1, Sha Zhu1, Julien Bachmann1,2
1Chemistry of Thin Film Materials (CTFM), Interdisciplinary Center of Nanostructured Films (IZNF), Friedrich Alexander University of Erlangen-Nuremberg, Cauerstr. 3, 91058 Erlangen, Germany. julien.bachmann@fau.de.
Dalton Transactions (Cambridge, England : 2003)
|September 28, 2021
Summary
Solution-based atomic layer deposition (sALD) successfully created hafnium disulfide (HfS2) films. This versatile method expands material options for optoelectronics, overcoming precursor limitations of traditional methods.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Two-dimensional materials like hafnium disulfide (HfS2) are crucial for optoelectronics.
- Atomic layer deposition (ALD) is a key technique for precise thin-film fabrication in microelectronics.
- Traditional gaseous ALD (gALD) has limitations, particularly regarding precursor volatility.
Purpose of the Study:
- To develop a novel solution-based atomic layer deposition (sALD) method for HfS2 synthesis.
- To compare the performance and characteristics of sALD-grown HfS2 with those from gALD.
- To demonstrate the versatility of sALD for synthesizing transition metal dichalcogenides.
Main Methods:
- Utilized tetrakis-(dimethylamido) hafnium(IV) and H2S as precursors in a solution phase.
- Employed atomic layer deposition principles for controlled film growth.
- Characterized deposited HfS2 films using spectroscopic ellipsometry, scanning electron microscopy, and X-ray photoelectron spectroscopy on various oxide substrates.
Main Results:
- Achieved a growth rate of 0.4–0.6 Å per sALD cycle, dependent on substrate.
- Deposited HfS2 films at room temperature, resulting in an amorphous state.
- Demonstrated successful synthesis of transition metal dichalcogenides via sALD.
Conclusions:
- Solution ALD (sALD) is a viable and versatile method for producing hafnium disulfide (HfS2) thin films.
- sALD expands the range of synthesizable materials, including transition metal dichalcogenides.
- This approach overcomes precursor volatility constraints inherent in traditional gaseous ALD (gALD).
