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Updated: Oct 18, 2025

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Spin Polarization, Electron-Phonon Coupling, and Zero-Phonon Line of the NV Center in 3C-SiC
Hans Jurgen von Bardeleben1, Jean-Louis Cantin1, Uwe Gerstmann2
1Sorbonne Université, Institut des Nanosciences de Paris, UMR 7588 au CNRS 4, place Jussieu, 75005 Paris, France.
Abstract:
The nitrogen-vacancy (NV) center in 3C-SiC, the analog of the NV center in diamond, has recently emerged as a solid-state qubit with competitive properties and significant technological advantages. Combining first-principles calculations and magnetic resonance spectroscopy, we provide thorough insight into its magneto-optical properties. By applying resonantly excited electron paramagnetic resonance spectroscopy, we identified the zero-phonon absorption line of the 3A2 → 3E transition at 1289 nm (within the telecom O-band) and measured its phonon sideband, the analysis of which reveals a Huang-Rhys factor of S = 2.85 and a Debye-Waller factor of 5.8%. The low-temperature spin-lattice relaxation time was found to be exceptionally long (T1 = 17 s at 4 K). All these properties make NV in 3C-SiC a strong competitor for qubit applications. In addition, the strong variation of the zero-field splitting in the range 4-380 K allows its application for nanoscale thermal sensing.
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