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Updated: Oct 18, 2025
Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Facile Removal of Bulk Oxygen Vacancy Defects in Metal Oxides Driven by Hydrogen-Dopant Evaporation
Min Hu1, Qing Zhu1, Yuan Zhao2
1Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Collaborative Innovation Center of Chemistry for Energy Materials, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
Abstract:
Oxygen vacancy is a common defect in metal oxides that causes appreciable damage to material properties and performance. Removing bulk defects of oxygen vacancy (VO) typically needs harsh conditions such as high-temperature annealing. Supported by first-principles simulations, we propose an effective strategy of removing VO bulk defects in metal oxides by evaporating hydrogen dopants. The hydrogen dopants not only lower the migration barrier of VO but also push VO away due to their repulsive interaction. The coevaporation mechanism was supported by a neural networks potential-based molecular dynamics simulation, which shows that the migration of hydrogen dopants from inside to surface at 400 K promotes the migration of VO as well. Our proof-of-concept study suggests an alternative and efficient way of modulating oxygen vacancies in metal oxides via reversible hydrogen doping.
