Towards High-Performance Resistive Switching Behavior through Embedding a D-A System into 2D Imine-Linked Covalent...

Area of Science:

• Materials Science
• Nanotechnology
• Organic Electronics

Background:

• The demand for advanced materials in big data storage necessitates innovations in resistive random-access memory (ReRAM).
• Covalent organic frameworks (COFs) offer tunable properties for electronic applications.

Purpose of the Study:

• To design and synthesize novel donor-acceptor (D-A) type covalent organic frameworks (COFs) for resistive switching memristors.
• To evaluate the performance of these COFs as active layers in high-performance memristors.

Main Methods:

• Imine-linked frameworks incorporating D-A fragments were designed.
• Two-dimensional COFs (COF-BT-TT and COF-TT-TVT) were synthesized via solvothermal methods.
• Thin films of COFs were deposited on ITO substrates for device fabrication.

Main Results:

• High ON/OFF current ratios (10^5 for COF-BT-TT, 10^4 for COF-TT-TVT) were achieved.
• Low driving voltages (1.30 V for COF-BT-TT, 1.60 V for COF-TT-TVT) were demonstrated.
• COF-BT-TT based devices showed excellent endurance (319 cycles) and retention (3.3x10^4 s).

Conclusions:

• The developed D-A type COFs are suitable for fabricating high-performance rewritable memristors.
• These COFs represent a significant advancement in materials for next-generation data storage.
• The strategy of embedding D-A fragments in imine-linked frameworks is effective for creating functional memristive materials.