A temperature-dependent gain compensation technique for positron emission tomography detectors based on a silicon...

In this study, we propose a simple gain compensation technique for silicon photomultiplier (SiPM)-based positron emission tomography detectors, using a temperature sensor that automatically controls the bias voltage of the SiPM depending upon the ambient temperature. The temperature sensor output, for which the temperature coefficient can be controlled by the input voltage, is used as one end of the bias voltage. By adjusting the temperature coefficient, the proposed gain compensation method can be applied to various SiPMs with different breakdown voltages. As a proof of concept, the proposed method was evaluated for two scintillation detector setups. Applying the proposed method to a single-channel SiPM (ASD-NUV3S-P; AdvanSiD, Italy) coupled with a 3 mm × 3 mm × 20 mm LGSO crystal, the 511 keV photopeak position in the energy histogram changed by only 1.52% per 10 °C while, without gain compensation, it changed by 13.27% per 10 °C between 10 °C and 30 °C. On a 4 × 4 array MPPC (S14161-3050HS-04; Hamamatsu, Japan), coupled with a 3.12 mm × 3.12 mm × 15 mm 4 × 4 LSO array, the photopeak changes with and without gain compensation were 2.34% and 20.53% per 10 °C between 10 °C and 30 °C, respectively. On the wider range of temperature, between 0 °C and 40 °C, the photopeak changes with and without gain compensation were 3.09% and 20.89%, respectively. The energy resolution degradation of SiPM-based scintillation detectors operating at temperatures was negligible when the proposed gain compensation method was applied.