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Updated: Oct 18, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Oxygen Vacancy Defects and a Field Effect-Mediated ZnO/WO2.92 Heterojunction for Enhanced Corrosion Resistance
Xiao-Jiao Guo1, Xiu Yang1, Xiao-Yu Yuan1
1Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology (ECUST), Shanghai 200237, P.R. China.
Abstract:
The heterojunction constructed by tungsten oxide and zinc oxide materials can improve the problem of easy deactivation of electrons, which is a new and effective strategy for realizing anticorrosion. Here, the ZnO/WO2.92 heterojunction modified by oxygen vacancies (OVs) serving as the photoelectric conversion center was not consumed to provide continuous light-induced protection for steel, and the impedance value was increased by 185.35% compared to that of epoxy resin after 72 h of corrosion. The enhanced anticorrosion activity was due to OV modification leading to oxygen adsorption and electron capture, which inhibited the cathodic corrosion reaction and effectively hindered electron transport. Additionally, the localized surface plasmon resonance effect produced by OVs improved light utilization efficiency and increased electron density, which enabled numerous photoelectrons to gather on the surface of the iron substrate to reduce the corrosion rate of metals. Besides, the cascade effect of the ZnO/WO2.92 heterojunction promoted the transfer of e-/h+ to form an electric field that allowed the directional flow of electrons to inhibit the anode dissolution process. Thus, exploring the corrosion reaction involving OVs and heterojunction structures was of great significance to the development of nonsacrificial and efficient anticorrosion materials.
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