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Second-Order Josephson Effect in Excitonic Insulators.

Zhiyuan Sun1, Tatsuya Kaneko1, Denis Golež2,3,4

  • 1Department of Physics, Columbia University, 538 West 120th Street, New York, New York 10027, USA.

Physical Review Letters
|October 1, 2021
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This summary is machine-generated.

Nonzero interlayer tunneling in electron-hole bilayers creates a second-order Josephson effect, enabling ultrafast memory devices. This effect allows switching between two ground states using voltage pulses, applicable to excitonic insulators.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Excitonic orders in electron-hole bilayers arise from specific atomic orbital parities.
  • Interlayer tunneling is a key factor influencing electronic properties in layered materials.

Purpose of the Study:

  • To investigate the Josephson effect in electron-hole bilayers with excitonic orders.
  • To explore the potential for ultrafast memory devices based on these phenomena.

Main Methods:

  • Theoretical analysis of interlayer tunneling in electron-hole bilayers.
  • Modeling the relationship between interlayer current and excitonic order parameter phase.

Main Results:

  • Demonstrated a second-order Josephson effect (J=J_{c}sin2θ) due to interlayer tunneling.
  • Identified two degenerate ground states switchable by interlayer voltage pulses.
  • Extended findings to 3D stacks and 2D chains, showing potential for ultrafast memory applications.

Conclusions:

  • Interlayer tunneling in specific electron-hole bilayers leads to unique Josephson effects.
  • The discovered phenomena offer a pathway for developing novel ultrafast memory technologies.
  • The principles apply to materials like the excitonic insulator candidate Ta_{2}NiSe_{5}.