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3ω correction method for eliminating resistance measurement error due to Joule heating
Benny Guralnik1, Ole Hansen2, Henrik H Henrichsen1
1CAPRES - A KLA Company, Diplomvej 373, 2800 Kgs. Lyngby, Denmark.
The Review of Scientific Instruments
|October 2, 2021
Summary
Joule heating in nanoscale semiconductor devices causes inaccurate measurements. This study quantifies self-heating effects using 3ω signals to enable precise characterization of material properties.
Area of Science:
- Electrical characterization
- Semiconductor physics
- Thermal properties
Background:
- Four-terminal sensing is crucial for semiconductor characterization at (sub-)micrometer scales.
- Shrinking device dimensions exacerbate Joule heating, leading to measurement inaccuracies.
- Accurate material property determination is vital for semiconductor industry advancements.
Purpose of the Study:
- To quantify and compensate for self-heating effects in nanoscale electrical measurements.
- To enable accurate characterization of electromagnetic and thermal properties.
- To provide a method for obtaining zero-current transfer resistance.
Main Methods:
- Utilizing 3ω signals to detect and measure self-heating.
- Applying compensation techniques to correct for Joule heating artifacts.
- Developing a framework for inferring thermal properties from electrical measurements.
Main Results:
- Demonstrated quantification of self-heating effects using 3ω signals.
- Achieved accurate zero-current transfer resistance by compensating for self-heating.
- Showcased the potential to characterize temperature coefficient of resistance and Seebeck coefficient.
Conclusions:
- Self-heating effects in nanoscale devices can be accurately quantified and compensated.
- 3ω measurements offer a pathway to precise electrical and thermal characterization.
- This methodology is essential for reliable semiconductor device analysis at reduced scales.
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