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Updated: Oct 18, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Training the Polarization in Integrated La0.15 Bi0.85 FeO3 -Based Devices
Marvin Müller1, Yen-Lin Huang2,3, Saül Vélez1,4
1Department of Materials, ETH Zurich, Zurich, 8093, Switzerland.
Abstract:
The functionalities of BiFeO3 -based magnetoelectric multiferroic heterostructures rely on the controlled manipulation of their ferroelectric domains and of the corresponding net in-plane polarization, as this aspect guides the voltage-controlled magnetic switching. Chemical substitution has emerged as a key to push the energy dissipation of the BiFeO3 into the attojoule range but appears to result in a disordered domain configuration. Using non-invasive optical second-harmonic generation on heavily La-substituted BiFeO3 films, it is shown that a weak net in-plane polarization remains imprinted in the pristine films despite the apparent domain disorder. It is found that this ingrained net in-plane polarization can be trained with out-of-plane electric fields compatible with applications. Operando studies on capacitor heterostructures treated in this way show the full restoration of the domain configuration of pristine BiFeO3 along with a giant net in-plane polarization enhancement. Thus, the experiments reveal a surprising robustness of the net in-plane polarization of BiFeO3 against chemical modification, an important criterion in ongoing attempts to integrate magnetoelectric materials into energy-efficient devices.
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