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500 W peak power cavity dumped 2 µm GaSb-based VECSEL
Applied Optics
|October 6, 2021
Summary
A novel Gallium Antimonide-based vertical-external-cavity surface-emitting laser (VECSEL) achieved over 500 W peak power at 2.04 µm. This high-pulse-energy laser demonstrates excellent beam quality for diverse applications.
Area of Science:
- Optics and Photonics
- Semiconductor Lasers
- Materials Science
Background:
- Vertical-external-cavity surface-emitting lasers (VECSELs) offer advantages in beam quality and scalability.
- High-power, wavelength-specific lasers are crucial for advanced applications.
- Gallium Antimonide (GaSb)-based materials are suitable for mid-infrared emission.
Purpose of the Study:
- To develop a single transverse mode, high-pulse-energy VECSEL.
- To achieve high output power at a specific wavelength (2.04 µm).
- To demonstrate the potential of GaSb-based VECSELs for demanding applications.
Main Methods:
- Fabrication of a GaSb-based VECSEL structure.
- Implementation of a resonant cavity incorporating a Pockels cell and thin film polarizer.
- Utilizing a pulse-dumping mechanism for short pulse generation (10 ns).
Main Results:
- A single transverse mode VECSEL was successfully developed.
- The VECSEL achieved a peak output power exceeding 500 W at 2.04 µm.
- The laser maintained good beam quality throughout operation.
Conclusions:
- The developed GaSb-based VECSEL is a high-performance laser source.
- The device shows significant promise for applications including incoherent LIDAR, materials processing, gas sensing, and nonlinear optics.
