Simulation and experimental research of a high-order Bragg grating semiconductor laser

Area of Science:

• Optics and Photonics
• Semiconductor Lasers
• Materials Science

Background:

• Distributed Bragg reflector (DBR) lasers are crucial for various optical applications.
• The epitaxial structure significantly impacts DBR grating characteristics and laser performance.
• Optimizing epitaxial design is key to enhancing laser efficiency and output power.

Purpose of the Study:

• To investigate the influence of epitaxial structure on DBR grating characteristics.
• To determine the optimal epitaxial design for improved DBR laser performance.
• To fabricate and characterize a DBR laser based on a simulated symmetric epitaxial structure.

Main Methods:

• Simulation analysis of epitaxial structures for DBR gratings.
• Comparative analysis of symmetrical and asymmetrical epitaxial structures.
• Fabrication of a DBR laser utilizing a symmetric epitaxial structure.

Main Results:

• Symmetrical epitaxial structures lead to a lower threshold current and higher output power.
• A DBR laser fabricated with a symmetric epitaxial structure achieved single longitudinal mode output at ~1060 nm.
• Maximum output power reached 104.5 mW with a side mode suppression ratio (SMSR) of 43 dB.

Conclusions:

• The epitaxial structure critically influences DBR laser performance.
• Symmetric epitaxial designs are superior for achieving high-power, single-mode DBR laser operation.
• This research provides a pathway for developing advanced DBR laser devices.