Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

758
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
758
Types of Semiconductors01:20

Types of Semiconductors

1.0K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.0K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.1K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.1K
Biasing of FET01:22

Biasing of FET

394
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
394

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Ru-Doping-Induced Dual-Functionality in La<sub>0.6</sub>Sr<sub>0.4</sub>Co<sub>0.2</sub>Fe<sub>0.8</sub>O<sub>3-δ</sub>: Enhancing Efficient Multi-Fuels Oxidation and Suppressing Sr Segregation for Robust Symmetric Solid Oxide Cells.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

The Influencing Factors of Medical Postgraduates' Usage Intention Toward Artificial Intelligence-Generated Content Tools in Academic Research: Qualitative Analysis.

Journal of medical Internet research·2026
Same author

Gene delivery in mosquitos with a vesicular stomatitis virus vector.

iScience·2025
Same author

eHealth Literacy Assessment Instruments: Scoping Review.

Journal of medical Internet research·2025
Same author

Areas of research focus and trends in the research on the application of AIGC in healthcare.

Journal of health, population, and nutrition·2025
Same author

Electrochemical Model for Field Effect Conductivities of Electrolytes in Equilibrium Systems.

The journal of physical chemistry letters·2025

Related Experiment Video

Updated: Oct 17, 2025

Author Spotlight: Design and Evaluation of Au-Electroplated Carbon Fiber Cloth Electrodes for Hydrogen Peroxide Fuel Cells
06:39

Author Spotlight: Design and Evaluation of Au-Electroplated Carbon Fiber Cloth Electrodes for Hydrogen Peroxide Fuel Cells

Published on: October 20, 2023

3.4K

Field Effect Conductivities of P-I-N Heterostructure Films in Fuel Cells.

Yibo Guo1,2, Huiying Qi1,2, Xiaomin Zhang3

  • 1Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.

Nano Letters
|October 6, 2021
PubMed
Summary

Extraordinary ionic and electronic conductivities in heterostructure films originate from a field effect. This discovery clarifies conductivity origins and enhances fuel cell performance through potential-driven increases in ionic and electronic transport.

Keywords:
Electronic ConductivityField EffectHeterostructureIonic ConductivitySolid Oxide Cells

More Related Videos

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
11:38

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

18.7K
Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells
15:08

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

Published on: September 20, 2012

16.2K

Related Experiment Videos

Last Updated: Oct 17, 2025

Author Spotlight: Design and Evaluation of Au-Electroplated Carbon Fiber Cloth Electrodes for Hydrogen Peroxide Fuel Cells
06:39

Author Spotlight: Design and Evaluation of Au-Electroplated Carbon Fiber Cloth Electrodes for Hydrogen Peroxide Fuel Cells

Published on: October 20, 2023

3.4K
Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
11:38

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

18.7K
Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells
15:08

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

Published on: September 20, 2012

16.2K

Area of Science:

  • Materials Science
  • Solid-State Chemistry
  • Electrochemistry

Background:

  • Ionic conductivity is crucial for energy devices like fuel cells, batteries, and electrolysis cells.
  • The precise origins of enhanced ionic conductivity in heterostructure films remain unclear, hindering device optimization.

Purpose of the Study:

  • To elucidate the origins of extraordinary ionic and electronic conductivities in cerium gadolinium oxide (CGO)/yttrium zirconium oxide (YSZ) heterostructures.
  • To investigate the role of field effects in enhancing conductivity within these materials.

Main Methods:

  • Fabrication and characterization of Ce0.8Gd0.2O2-δ (CGO)/Zr0.85Y0.15O2-δ (YSZ) heterostructures.
  • Electrical conductivity measurements under varying applied potentials.
  • Analysis of potential generation mechanisms within the p-i-n junction.

Main Results:

  • Both ionic conductivity in the CGO layer and electronic conductivity in the YSZ layer showed exponential increases with applied potential.
  • The potential driving these conductivity enhancements was attributed to electron transfer and stoichiometric polarization within the p-i-n junction.
  • Field-effect ionic conductivity significantly contributed to the increase in maximum power density of fuel cells.

Conclusions:

  • The study demonstrates that field effects are the source of extraordinary ionic and electronic conductivities in CGO/YSZ heterostructures.
  • These findings reveal the dependence of conductivity on heterostructure properties and their significant impact on fuel cell performance.