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Defect height estimation via model-less TSOM under optical resolution.

Ji Yong Joo, Jun Ho Lee, Won Hyuk Jang

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    |October 7, 2021
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    Summary
    This summary is machine-generated.

    We developed a new model-less through-focus scanning optical microscopy (TSOM) method to measure defect heights without a reference database. This technique accurately determines defect dimensions for industrial applications like OLED displays.

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    Area of Science:

    • Optical Microscopy
    • Metrology
    • Materials Science

    Background:

    • Traditional through-focus scanning optical microscopy (TSOM) requires time-consuming reference databases.
    • Database creation is impractical for complex structures (e.g., 3D NAND) or irregular defects.
    • Accurate defect height measurement is crucial for applications like display panels.

    Purpose of the Study:

    • To introduce a novel model-less TSOM method for defect height determination.
    • To eliminate the need for TSOM reference databases.
    • To enable high-throughput, non-destructive defect analysis in industrial settings.

    Main Methods:

    • A motion-free TSOM tool was developed with a 50× objective lens (NA 0.55), 532-nm light source, and deformable mirror.
    • Analyzed 40 organic light-emitting diode (OLED) surface defects.
    • Investigated linear regression between new TSOM parameters (height, area, volume) and atomic force microscopy (AFM) measured heights.

    Main Results:

    • The model-less TSOM method successfully determined defect heights, a first for this technique.
    • A linear correlation was found between AFM height and 50% TSOM height (H50%) within ±20.3 nm (1σ) error.
    • The achieved accuracy represents approximately λ/26 or 1/43 of the microscope's depth of focus.

    Conclusions:

    • The proposed model-less TSOM is a viable, database-free method for precise defect height measurement.
    • This technique offers high throughput and non-destructive analysis suitable for industrial display panel applications.
    • The method demonstrates significant potential for quality control in microelectronics manufacturing.