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Above 15% Efficient Directly Sputtered CIGS Solar Cells Enabled by a Modified Back-Contact Interface.
Wanlei Dai1, Zeran Gao1, Jianjun Li2
1Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China.
Researchers developed a novel method to fabricate high-efficiency copper indium gallium selenide (CIGS) solar cells. A thin molybdenum selenide (MoSe2) layer, formed without a selenium atmosphere, significantly improved performance by reducing the back-contact barrier.
Area of Science:
- Materials Science
- Photovoltaics
- Semiconductor Physics
Background:
- Schottky back-contact barriers at the Mo/Cu(In,Ga)Se2 (CIGS) interface limit CIGS solar cell performance.
- A MoSe2 intermediate layer can reduce this barrier, enhancing hole transport.
- Conventional direct sputtering methods struggle to form MoSe2 without a selenium atmosphere.
Purpose of the Study:
- To fabricate high-efficiency CIGS solar cells using a direct sputtering process without a selenium atmosphere.
- To investigate the formation and impact of a MoSe2 intermediate layer on photovoltaic performance.
- To provide an industrially viable approach for commercializing directly sputtered CIGS solar cells.
Main Methods:
- Deposition of an intermediate CIGS layer on a Mo substrate at room temperature.
- Ramping the structure to a high temperature (600 °C) to facilitate MoSe2 formation.
- Characterization of the MoSe2 layer and its effect on the CIGS/Mo interface and cell efficiency.
Main Results:
- A Se-rich, amorphous CIGS intermediate layer reacted with the Mo substrate at high temperatures to form a thin MoSe2 layer.
- The formed MoSe2 layer effectively reduced the CIGS/Mo barrier height, improving hole transport.
- CIGS solar cells with an 80 nm intermediate layer achieved a power conversion efficiency of 15.8%.
Conclusions:
- Direct sputtering of CIGS solar cells without a selenium atmosphere is feasible by utilizing a Se-rich intermediate CIGS layer.
- The in-situ formed MoSe2 layer is crucial for reducing the back-contact barrier and enhancing device performance.
- This method offers a new pathway for the commercialization of directly sputtered CIGS solar cells.
