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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Effective Landé factors for an electrostatically defined quantum point contact in silicene
Bartłomiej Rzeszotarski1, Alina Mreńca-Kolasińska2,3, François M Peeters4
1Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059, Kraków, Poland. rzeszotarski@fis.agh.edu.pl.
Abstract:
The transconductance and effective Landé [Formula: see text] factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin-orbit coupling in buckled silicene reduces the [Formula: see text] factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of [Formula: see text] factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic spin-orbit coupling defined by the Kane-Mele form of interaction.
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