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Related Experiment Video

Updated: Oct 17, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Published on: July 24, 2015

Critical current fluctuations in graphene Josephson junctions.

Mohammad T Haque¹, Marco Will², Matti Tomi²

¹Low Temperature Laboratory, QTF Centre of Excellence, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, 00076, Aalto, Finland. mohammad.haque@aalto.fi.

Scientific Reports

|October 7, 2021

Summary

We observed 1/f noise in critical current fluctuations in graphene superconducting devices. These fluctuations, linked to the proximity-induced gap, impact device performance.

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Area of Science:

Condensed Matter Physics
Materials Science

Background:

Studying 1/f noise in superconducting devices is crucial for understanding device limitations.
Graphene-based Josephson junctions offer unique properties for superconducting electronics.

Purpose of the Study:

To investigate 1/f noise in the critical current of graphene Josephson junctions.
To understand the origin of these fluctuations and their dependence on device parameters.

Main Methods:

Fabrication of hexagonal boron nitride (h-BN) encapsulated monolayer graphene Josephson junctions contacted by Niobium Titanium Nitride (NbTiN) electrodes.
Measurement of low-frequency noise in the superconducting state by tracking reflection carrier signal variations.
Analysis of critical current fluctuations near the Dirac point.

Main Results:

Observed 1/f noise in critical current (Ic) of the graphene junction.
Quantified critical current fluctuations on the order of 10^-5 /Hz at 1 Hz.
Found that noise power spectrum follows a power law, P(f) ~ f^-α, with α ≈ 1.

Conclusions:

The observed 1/f critical current noise originates from fluctuations in the proximity-induced superconducting gap in the graphene.
These findings highlight the importance of interface quality and gap stability for graphene-based superconducting devices.