Gas-Phase Fluorination of Hexagonal Boron Nitride
AshokKumar Meiyazhagan1, Peter Serles2, Devashish Salpekar1
1Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA.
Advanced Materials (Deerfield Beach, Fla.)
|October 7, 2021
Summary
Fluorinating hexagonal boron nitride (hBN) using a gas-phase technique creates a semiconducting material with improved thermal and friction properties. This scalable method enhances 2D materials for electronics and lubricants.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Hexagonal boron nitride (hBN) is a 2D dielectric material with diverse applications.
- Its chemical inertness makes functionalization difficult.
- Developing methods for hBN modification is crucial for advanced applications.
Purpose of the Study:
- To report a scalable gas-phase fluorination technique for hBN.
- To characterize the fluorine bonding and coordination on the hBN lattice.
- To investigate the impact of fluorination on hBN's electronic, thermal, and friction properties.
Main Methods:
- Direct gas-phase fluorination of hBN.
- Characterization using various analytical techniques.
- Theoretical modeling and simulations to understand bonding and properties.
Main Results:
- Successful fluorination of hBN achieved via a scalable gas-phase method.
- Fluorination reduces the bandgap, inducing semiconducting behavior.
- Enhanced thermal stability and reduced friction observed in fluorinated hBN.
- Simulations confirm reduced inter-planar interactions due to fluorine intercalation.
Conclusions:
- Gas-phase fluorination is an effective strategy for modifying hBN.
- Fluorinated hBN exhibits desirable electronic, thermal, and tribological properties.
- This technique enables the functionalization of other 2D materials for advanced applications.
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