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A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization
Adem Koçyiğit1,2, Adem Sarılmaz3, Teoman Öztürk4
1Department of Electrical Electronic Engineering, Engineering Faculty, Igdir University, 76000 Igdir, Turkey.
Beilstein Journal of Nanotechnology
|October 8, 2021
Summary
Copper nickel cobalt sulfide (CuNiCoS4) nanocrystals were synthesized and tested. The resulting material shows promise for high-efficiency optoelectronic devices like photodiodes due to its excellent electrical and photoresponse properties.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Thiospinel nanocrystals are promising for electronic applications.
- Developing novel materials for optoelectronics is crucial for technological advancement.
Purpose of the Study:
- To synthesize and characterize CuNiCoS4 thiospinel nanocrystals.
- To evaluate the performance of CuNiCoS4 as an interfacial layer in Au/CuNiCoS4/p-Si devices for photodiode and capacitance applications.
Main Methods:
- Hot injection synthesis for CuNiCoS4 nanocrystals.
- Characterization using X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS).
- Electrical and capacitance measurements (I-V and C-V characteristics) to assess device performance.
Main Results:
- Successful synthesis of CuNiCoS4 thiospinel nanocrystals confirmed by XRD, HR-TEM, and EDS.
- Fabricated Au/CuNiCoS4/p-Si devices demonstrated good rectifying behavior, high photoresponse, and favorable resistance parameters.
- Capacitance and conductance were found to be dependent on voltage and frequency.
Conclusions:
- CuNiCoS4 thiospinel nanocrystals are successfully synthesized and characterized.
- The fabricated devices exhibit excellent properties suitable for optoelectronic applications.
- The material shows potential for use in high-efficiency photodiode applications.

