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Nitrogen-Doped Ti3C2T MXene Induced by Plasma Treatment with Enhanced Microwave Absorption Properties
Weimin Xu1, Shibo Li1,2, Weiwei Zhang1
1Center of Materials Science and Engineering, School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China.
Abstract:
Ti3C2T has microwave absorption (MA) properties due to its dielectric loss, but the absence of magnetic loss capability of pure Ti3C2T causes unmatched impedance and unsatisfied MA performance. Modification of Ti3C2T with magnetic particles is an effective way to introduce the magnetic loss mechanism. However, these modified Ti3C2T particles have higher density and require complicated fabrication processes, restricting the industrial production and functional applications. Here, a low-temperature and simple method of radio-frequency N2 plasma treatment was adopted to modify Ti3C2T with N. More interestingly, the N-doped Ti3C2T flakes demonstrated magnetic properties and thus exhibited drastically enhanced MA properties. The minimum reflection loss (RLmin) of -59.20 dB at 10.56 GHz was achieved in N-doped Ti3C2T products after only 3 min of plasma treatment, remarkably higher than RLmin of -11.07 dB at 7.92 GHz for the pristine Ti3C2T. The main mechanism is due to the combination of dielectric loss, magnetic loss, and the good impedance matching in the N-doped Ti3C2T. Further prolonging the nitriding time induces much desorption of -F and the formation of TiO2, thus deteriorating the impedance matching and the MA properties.
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