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Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

Fang Zhong1,2,3, Jiafu Ye1,3, Ting He1,3,4

  • 1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.

Small (Weinheim an Der Bergstrasse, Germany)
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Researchers created p-type molybdenum diselenide (MoSe2) using tantalum doping, enabling high-performance 2D material photodetectors and inverters for practical electronic applications.

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MoSe 2invertersphotodetectorssubstitutional doping

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials offer tunable carrier properties for electronic and optoelectronic devices.
  • Current 2D material applications lag behind their potential due to performance limitations.

Purpose of the Study:

  • To achieve p-type molybdenum diselenide (MoSe2) via substitutional doping.
  • To fabricate and characterize MoSe2 homojunction devices for practical applications.

Main Methods:

  • Substitutional doping of MoSe2 with tantalum (Ta) atoms.
  • Experimental and theoretical confirmation of p-type MoSe2.
  • Fabrication and testing of MoSe2 p-n homojunction photodetectors and inverters.

Main Results:

  • Achieved p-type MoSe2 with Ta doping, confirmed experimentally and theoretically.
  • Fabricated MoSe2 p-n homojunction devices with high rectification ratio (10^4) and low reverse current (300 pA).
  • Developed photodetectors with high responsivity (0.28 A/W), EQE (42%), and fast response (20 µs); and inverters with high voltage gain (34) and low power consumption (127 nW).

Conclusions:

  • Tantalum doping is an effective method for creating p-type MoSe2.
  • MoSe2 homojunction devices demonstrate significant potential for micro-solar cells, photodetectors, and inverters.
  • This work advances the practical application of 2D materials in electronic devices.