Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
Understanding Memory01:19

Understanding Memory

694
Memory is the retention of information or experiences over time, facilitated through three main processes: encoding, storage, and retrieval. Encoding is the process of inputting information into the memory system. For instance, when listening to a lecture, watching a play, reading a book, or having a conversation, the brain is actively encoding information. This initial stage involves transforming sensory input into a form that can be processed and stored by the brain. Various factors, such as...
694
Higher Mental Functions of Brain: Learning and Memory01:26

Higher Mental Functions of Brain: Learning and Memory

1.2K
Memory is one of the most vital higher mental functions of the brain. Memory is closely related to learning because it enables us to retain information and experiences from our past to use them in our present life. It also helps us to remember facts, events, and skills, such as riding a bike or swimming. There are two types of memory — declarative memory, which involves memorizing facts or events, and procedural memory, which enables us to remember how to do something like writing or...
1.2K
Types of Semiconductors01:20

Types of Semiconductors

1.0K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.0K
Role of Neurotransmitters in Memory01:23

Role of Neurotransmitters in Memory

1.5K
Neurotransmitters are integral to the brain's communication system, enabling neurons to transmit signals across synapses. This chemical exchange underpins various cognitive functions, including memory processes. The role of neurotransmitters in memory is multifaceted, influencing the encoding, consolidation, and retrieval of memories through their action on different neural circuits.
 Glutamate and Synaptic Plasticity
Glutamate, the brain's main excitatory neurotransmitter, is...
1.5K
Role of Cerebellum and Prefrontal Cortex in Memory01:14

Role of Cerebellum and Prefrontal Cortex in Memory

652
The cerebellum, while traditionally associated with motor control, also plays a crucial role in memory, particularly in procedural memory, which involves learning motor tasks that become automatic through repetition. For example, studies have shown that when the cerebellum is damaged, individuals or animals lose the ability to learn conditioned motor responses, such as the conditioned eye-blink response in classical conditioning experiments with rabbits. This study demonstrates the...
652

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Single-Molecule Triad: 6-MCA Additive Synchronizes Defect Passivation, Morphology Control, and Moisture Blockade for Efficient and Stable Perovskite Solar Cells.

ACS applied materials & interfaces·2026
Same author

Multisite Passivation and Surface Reconstruction of Perovskite for All-Air-Fabricated Perovskite Solar Cells.

Nano letters·2026
Same author

Vacancy-Anchored Single-Atom Nb<sub>2</sub>CO<sub>2</sub> MXene: Electronic Origins of Multi-Site Cooperative Trifunctional Electrocatalysis.

ACS applied materials & interfaces·2026
Same author

The underlying synergistic mechanism of co-solvents to fabricate high-quality FAPbI<sub>3</sub> perovskite films.

Chemical science·2026
Same author

A thousand-state optoelectronic memory for high-precision spatiotemporal encoding.

Nature communications·2026
Same author

Accelerating Catalyst Materials Discovery With Large Artificial Intelligence Models.

Angewandte Chemie (International ed. in English)·2026

Related Experiment Video

Updated: Oct 16, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.0K

ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing.

Bai Sun1,2, Guangdong Zhou3, Linfeng Sun4

  • 1School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China. bsun@swjtu.edu.cn.

Nanoscale Horizons
|October 15, 2021
PubMed
Summary

ABO3 multiferroic perovskites show promise for nanoelectronic devices due to their unique properties. Their memristive effects, controllable via doping and interfaces, are key for artificial intelligence applications like data storage and neuromorphic computing.

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K

Related Experiment Videos

Last Updated: Oct 16, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • ABO3 multiferroic perovskites possess unique electron spin, transfer, polarization, and magnetoelectric coupling properties.
  • These characteristics make them suitable for multifunctional nanoelectronic devices.
  • Their memristive effect is driven by reversible ferroelectric polarization, defect concentration, and domain wall movement.

Purpose of the Study:

  • To review the internal physical dynamics, preparation technologies, and modulation methods of ABO3-based memristive devices.
  • To examine the progress, challenges, and potential solutions for ABO3-based memristive applications in artificial intelligence.
  • To highlight the role of ion doping, electrode selection, and interface modulation in enhancing device performance.

Main Methods:

  • Systematic examination of internal physical dynamics.
  • Review of preparation technologies for ABO3 materials.
  • Analysis of modulation methods including ion doping, electrode selection, and interface engineering.
  • Investigation of resistive switching (RS) behavior through dopant control, oxygen vacancy manipulation, ion diffusion modulation, and band structure engineering.

Main Results:

  • ABO3 multiferroic perovskites exhibit controllable memristive effects crucial for data storage and processing.
  • Ion doping, electrode selection, and interface modulation are effective strategies for optimizing ABO3-based memristive devices.
  • Specific methods like controlling dopants, altering oxygen vacancies, and modulating ion diffusion depth yield unique RS behavior.

Conclusions:

  • ABO3-based memristive devices offer significant potential for artificial intelligence applications.
  • Further research into preparation technologies and modulation methods is needed to overcome current challenges.
  • Optimizing interface-dependent band structures and physical dynamics will pave the way for next-generation AI hardware.