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Surface Passivation Treatment to Improve Performance and Stability of Solution-Processed Metal Oxide Transistors for
Moon Hyo Kang1,2, John Armitage1,3, Zahra Andaji-Garmaroudi1
1Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK.
Abstract:
Hybrid integration of n-type oxide with p-type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution-processed oxide transistors is limiting the lifetime and reliability of such circuits. Oxygen vacancies are the main defect degrading metal oxide transistor performance when ambient oxygen adsorbs onto metal oxide films. Here, an effective surface passivation treatment based on negative oxygen ion exposure combined with UV light is demonstrated, that is able to significantly reduce surface oxygen vacancy concentration and improve the field effect mobility to values up to 41 cm2 V-1 s-1 with high on-off current ratio of 108 . The treatment also reduces the threshold voltage shift after 2 days in air from 5 to 0.07 V. The improved stability of the oxide transistors also improves the lifetime of hybrid complementary circuits and stable operation of complementary, analog amplifiers is confirmed for 60 days in air. The suggested approach is facile and can be widely applicable for flexible electronics using low-temperature solution-processed metal oxide semiconductors.
