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Updated: Oct 16, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Taeyong Kim1, Saejin Oh2, Usama Choudhry1
1Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, United States.
Researchers used scanning ultrafast electron microscopy to observe transient strain in poly(3-hexylthiophene). This reveals how local deformation impacts semiconducting polymer optoelectronics for flexible devices.
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
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