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Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes
Vladimir Neplokh1,2, Vladimir Fedorov1,2, Alexey Mozharov2
1High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia.
Nanomaterials (Basel, Switzerland)
|October 23, 2021
Summary
Flexible red light-emitting diodes (LEDs) were created using gallium phosphide arsenide/gallium phosphide (GaPAs/GaP) nanowires. These novel membrane-based LEDs offer potential for future flexible, full-color inorganic electronic displays.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Flexible electronic devices require novel light-emitting components.
- Gallium phosphide arsenide/gallium phosphide (GaPAs/GaP) heterostructures are promising for light emission.
Purpose of the Study:
- To demonstrate flexible red light-emitting diodes (LEDs) using GaPAs/GaP nanowires.
- To investigate the properties of membrane-based nanowire LEDs.
Main Methods:
- Growth of GaPAs/GaP axial nanowire arrays via molecular beam epitaxy.
- Encapsulation of nanowires in polydimethylsiloxane (PDMS) membranes.
- Fabrication of free-standing membranes with single-walled carbon nanotube (SWCNT) transparent electrodes.
Main Results:
- Fabricated membrane-based LEDs exhibit electroluminescence with a peak at 670 nm.
- Properties of membrane-based LEDs are comparable to those processed directly on the growth substrate.
- Demonstrated feasibility of free-standing nanowire LED membranes.
Conclusions:
- Flexible red LEDs based on GaPAs/GaP nanowires embedded in PDMS membranes were successfully demonstrated.
- These membrane-based LEDs show potential for integration into flexible, full-color inorganic optoelectronic devices.
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