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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

1.1K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Updated: Oct 15, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes.

Vladimir Neplokh1,2, Vladimir Fedorov1,2, Alexey Mozharov2

  • 1High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia.

Nanomaterials (Basel, Switzerland)
|October 23, 2021
PubMed
Summary

Flexible red light-emitting diodes (LEDs) were created using gallium phosphide arsenide/gallium phosphide (GaPAs/GaP) nanowires. These novel membrane-based LEDs offer potential for future flexible, full-color inorganic electronic displays.

Keywords:
GaPAsflexible LEDmolecular beam epitaxynanowiressingle-walled carbon nanotubes

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Flexible electronic devices require novel light-emitting components.
  • Gallium phosphide arsenide/gallium phosphide (GaPAs/GaP) heterostructures are promising for light emission.

Purpose of the Study:

  • To demonstrate flexible red light-emitting diodes (LEDs) using GaPAs/GaP nanowires.
  • To investigate the properties of membrane-based nanowire LEDs.

Main Methods:

  • Growth of GaPAs/GaP axial nanowire arrays via molecular beam epitaxy.
  • Encapsulation of nanowires in polydimethylsiloxane (PDMS) membranes.
  • Fabrication of free-standing membranes with single-walled carbon nanotube (SWCNT) transparent electrodes.

Main Results:

  • Fabricated membrane-based LEDs exhibit electroluminescence with a peak at 670 nm.
  • Properties of membrane-based LEDs are comparable to those processed directly on the growth substrate.
  • Demonstrated feasibility of free-standing nanowire LED membranes.

Conclusions:

  • Flexible red LEDs based on GaPAs/GaP nanowires embedded in PDMS membranes were successfully demonstrated.
  • These membrane-based LEDs show potential for integration into flexible, full-color inorganic optoelectronic devices.