High-Chern-number and high-temperature quantum Hall effect without Landau levels
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Updated: Oct 15, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Jun Ge1, Yanzhao Liu1, Jiaheng Li2
1International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
Abstract:
The quantum Hall effect (QHE) with quantized Hall resistance of h/νe 2 started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C| = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C > 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.
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