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Metal Halide Semiconductors beyond Lead-Based Perovskites for Promising Optoelectronic Applications
Xinjiang Wang, Tianshu Li, Bangyu Xing
1Department of Chemistry and Physics, Arkansas State University, Jonesboro, Arkansas 72467, United States.
The Journal of Physical Chemistry Letters
|October 25, 2021
Summary
This perspective explores lead-free metal halide semiconductors for optoelectronics, addressing challenges like toxicity and stability. It reviews material categories, properties, and applications, offering future development insights.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Optoelectronics
Background:
- Metal halide semiconductors, particularly lead-based halide perovskites, show promise for optoelectronic devices.
- These materials possess unique crystalline structures, bonding, and electronic properties distinct from traditional semiconductors.
- Commercialization is hindered by lead toxicity, stability issues, and technological challenges.
Purpose of the Study:
- To review emerging lead-free metal halide semiconductors for high-performance optoelectronic applications.
- To discuss the advantages, physical and chemical underpinnings of these materials.
- To provide an outlook on future challenges and opportunities in the field.
Main Methods:
- Review of existing literature on metal halide semiconductors.
- Classification of materials into three categories: 3D halide perovskites, low-dimensional perovskites and perovskite-like materials, and materials beyond perovskites.
- Analysis of composition, structure, electronic structure, optoelectronic properties, and device applications.
Main Results:
- Metal halide semiconductors offer unique advantages for optoelectronics.
- Lead-free alternatives are being developed to overcome toxicity and stability concerns.
- Diverse material categories exhibit tailored properties for various applications.
Conclusions:
- Lead-free metal halide semiconductors are crucial for advancing sustainable optoelectronics.
- Further research into material design, stability, and fabrication is needed.
- The field holds significant potential for next-generation optoelectronic devices.
